Philips TDA1519C Instrukcja Użytkownika

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DATA SHEET
Product specification
Supersedes data of 2001 Aug 24
2004 Jan 28
INTEGRATED CIRCUITS
TDA1519C
22 W BTL or 2 11 W
stereo power amplifier
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Podsumowanie treści

Strona 1 - DATA SHEET

DATA SHEETProduct specificationSupersedes data of 2001 Aug 242004 Jan 28 INTEGRATED CIRCUITS TDA1519C22 W BTL or 2  11 W stereo power amplifier

Strona 2

2004 Jan 28 10 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CAPPLICATION INFORMATION2200µF1000µF100 µF10

Strona 3

2004 Jan 28 11 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519C02060304050mgr539481216Iq(tot)(mA)VP (V)Fig

Strona 4

2004 Jan 28 12 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519C12010-1110102mgr54148THD(%)Po (W)Fig.10 To

Strona 5

2004 Jan 28 13 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CPACKAGE OUTLINESUNIT Abmax.bp2cD(1)E(1)Z(1)

Strona 6

2004 Jan 28 14 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CUNIT A A1A2A3bpcD(1)E(1)Z(1)deDhEhLpL REFER

Strona 7

2004 Jan 28 15 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CReferencesOutlineversionEuropeanprojectionI

Strona 8

2004 Jan 28 16 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CUNITA4(1) REFERENCESOUTLINEVERSIONEUROPEANP

Strona 9

2004 Jan 28 17 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CSOLDERINGIntroduction This text gives a ver

Strona 10 - TDA1519C

2004 Jan 28 18 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519Cdispensing. The package can be soldered aft

Strona 11

2004 Jan 28 19 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519C8. Wave soldering is suitable for LQFP, QFP

Strona 12

2004 Jan 28 2 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CFEATURES Requires very few external compone

Strona 13 - PACKAGE OUTLINES

2004 Jan 28 20 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CDATA SHEET STATUSNotes1. Please consult the

Strona 14 - 2004 Jan 28 14

2004 Jan 28 21 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CNXP Semiconductors does not accept any liab

Strona 15 - 2004 Jan 28 15

NXP Semiconductorsprovides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interf

Strona 16 - 2004 Jan 28 16

2004 Jan 28 3 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CQUICK REFERENCE DATASYMBOL PARAMETER CONDITI

Strona 17 - ANUAL SOLDERING

2004 Jan 28 4 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CBLOCK DIAGRAMmgl49160kWinputreferencevoltage

Strona 18

2004 Jan 28 5 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CPINNINGSYMBOLPINDESCRIPTIONTDA1519C; TDA1519

Strona 19

2004 Jan 28 6 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CFUNCTIONAL DESCRIPTIONThe TDA1519C contains

Strona 20

2004 Jan 28 7 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CTHERMAL CHARACTERISTICSDC CHARACTERISTICSVP=

Strona 21

2004 Jan 28 8 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CAC CHARACTERISTICSVP=14.4V; RL=4; f = 1 kHz

Strona 22 - NXP Semiconductors

2004 Jan 28 9 NXP Semiconductors Product specification22 W BTL or 2  11 W stereo power amplifierTDA1519CNotes1. Output power is measured directly at

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